Resistance random access memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 14, 2014
Grant Date -
Sep 25, 2014
app pub date -
Sep 6, 2013
filing date -
Mar 22, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A resistance random access memory device according to an embodiment includes a first electrode, a second electrode and a variable resistance film provided between the first electrode and the second electrode. The second electrode includes material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum, aluminum, and bismuth, alloys thereof, and silicides thereof. The variable resistance film includes silicon oxynitride. The variable resistance film includes a first resistance change layer having a first nitrogen concentration and a second resistance change layer having a second nitrogen concentration lower than the first nitrogen concentration.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully