Plasma processing apparatus, electrode temperature adjustment device and electrode temperature adjustment method
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United States of America Patent
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Oct 21, 2014
Grant Date -
Feb 19, 2009
app pub date -
May 5, 2008
filing date -
Jun 5, 2007
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Abstract
Before a substrate is processed in a plasma processing apparatus that inhibits an increase in the temperature of an upper electrode attributable to DC voltage application as well as an increase in the upper electrode temperature attributable to high-frequency power application, a heating medium target temperature to be achieved by a heating medium in order to adjust the upper electrode temperature to a predetermined temperature setting is calculated based upon the levels of the high-frequency power to be applied to the upper electrode and a susceptor (lower electrode) and the DC voltage to be applied to the upper electrode. During the substrate processing, the heating medium, the temperature of which is controlled based upon the target temperature, circulates through a flow passage formed at the upper electrode so as to control the temperature of the upper electrode.
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