Method for manufacturing nanostructure and nanostructure manufactured by the same

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United States of America Patent

PATENT NO 8865114
SERIAL NO

12769241

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Abstract

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Provided are methods for producing nanostructures and nanostructures obtained thereby. The methods include heating a certain point of a substrate dipped into a precursor solution of the nanostructures so that the nanostructures are grown in a liquid phase environment without evaporation of the precursor solution. The methods show excellent cost-effectiveness because of the lack of a need for precursor evaporation at high temperature. In addition, unlike the vapor-liquid-solid (VLS) process performed in a vapor phase, the method includes growing nanostructures in a liquid phase environment, and thus provides excellent safety and eco-friendly characteristics as well as cost-effectiveness. Further, the method includes locally heating a substrate dipped into a precursor solution merely at a point where the nanostructures are to be grown, so that the nanostructures are grown directly at a desired point of the substrate. Therefore, it is possible to grow and produce nanostructures directly in a device. As a result, unlike the conventional process, it is not necessary to assemble and integrate the nanostructures produced in a sacrificial substrate into a device.

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Patent Owner(s)

  • KAIST (KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY);KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ko, Seung Hwan Daejeon, KR 11 30
Park, Inkyu Daejeon, KR 17 133

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