Siloxane-based low dielectric constant thin films using cyclo-siloxane and a method for preparing the same
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United States of America Patent
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Oct 21, 2014
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Jan 5, 2012
app pub date -
Oct 21, 2010
filing date -
Jul 5, 2010
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Abstract
A low-dielectric constant thin film prepared from a silsesquioxane polymer matrix as a precursor and a method for preparing the same which comprises preparing silsesquioxane sol by adding a stereoisomer of a multi reactive cyclosiloxane to an alkoxysilane are provided. The low-dielectric-constant thin film retains a stable film state even at a curing temperature of −500° C. without being decomposed, a very uniform surface property with a low surface modulus, and a superior coatability as to be coatable smoothly with no crack even with a thickness of 500 nm or larger.
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