Integrated circuit device and method for manufacturing same
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United States of America Patent
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Oct 21, 2014
Grant Date -
Feb 14, 2013
app pub date -
Mar 1, 2012
filing date -
Aug 8, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
An integrated circuit device includes a plurality of fins on an upper surface of a semiconductor substrate and extending in a first direction, a device isolation insulating film placed between the fins, a gate electrode extending in a second direction crossing the first direction on the insulating film; and an insulating film insulating the fin from the gate electrode. In a first region where a plurality of the fins are consecutively arranged, an upper surface of the device isolation insulating film is located at a first position below an upper end of the fin. In a second region located in the second direction as viewed from the first region, the upper surface of the device isolation insulating film is located at a second position above the upper end of the fin. In the second region, the device isolation insulating film covers entirely a side surface of the fin.
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