Charge trapping dielectric structures
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United States of America Patent
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Oct 21, 2014
Grant Date -
Apr 5, 2012
app pub date -
Dec 12, 2011
filing date -
Oct 30, 2006
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Abstract
A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an embodiment, the dielectric structure may be formed by nitridation of a surface of an insulator using ammonia and deposition of a blocking insulator having a larger band gap than the insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.
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