Semiconductor device and manufacturing method of the same
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United States of America Patent
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Oct 21, 2014
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app pub date -
Nov 7, 2012
filing date -
Nov 28, 2011
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Abstract
A semiconductor device implemented with structures to suppress leakage current generation during operation and a method of making the same is provided. The semiconductor device includes a semiconductor substrate of first conductivity type, a second insulation film, which has at least one aperture between first and second apertures, formed on top of a first insulation film. The semiconductor device layer structure accommodates tensile stress differences between device layers to suppress lattice dislocation defects during device manufacturing and thus improves device reliability and performance.
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