Semiconductor device using buried oxide layer as optical wave guides

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United States of America Patent

PATENT NO 8867875
APP PUB NO 20090263923A1
SERIAL NO

12496007

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Abstract

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A semiconductor optical wave guide device is described in which a buried oxide layer (BOX) is capable of guiding light. Optical signals may be transmitted from one part of the semiconductor device to another, or with a point external to the semiconductor device, via the wave guide. In one example, an optical wave guide is provided including a core insulating layer encompassed by a clad insulating layer. The semiconductor device may contain an etched hole for guiding light to and from the core insulating layer from a transmitter or to a receiver.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shimooka, Yoshiaki Kanagawa-pref., JP 36 380

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