Method for achieving smooth side walls after Bosch etch process
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United States of America Patent
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Oct 28, 2014
Issued Date -
N/A
app pub date -
Mar 9, 2012
filing date -
May 12, 2011
priority date (Note) -
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Abstract
A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.
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