Subtractive plasma etching of a blanket layer of metal or metal alloy

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United States of America Patent

PATENT NO 8871107
SERIAL NO

13838763

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuller, Nicholas C M North Hills, US 48 372
Hoinkis, Mark Fishkill, US 29 838
Joseph, Eric A White Plains, US 95 825
Miyazoe, Hiroyuki White Plains, US 104 889
Yan, Chun San Jose, US 61 1877

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