Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density

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United States of America Patent

PATENT NO 8871530
SERIAL NO

13933286

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Abstract

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A mechanism is provided for a spin torque transfer random access memory device. A tunnel barrier is disposed on a reference layer, and a free layer is disposed on the tunnel barrier. The free layer includes an iron layer as a top part of the free layer. A metal oxide layer is disposed on the iron layer, and a cap layer is disposed on the metal oxide layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Guohan Yorktown Heights, US 84 729

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