Sealed air gap for semiconductor chip

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United States of America Patent

PATENT NO 8871624
APP PUB NO 20130130489A1
SERIAL NO

13742916

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Abstract

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A method for forming a sealed air gap for a semiconductor chip including forming a gate over a substrate; forming a sacrificial spacer adjacent to the gate; forming a first dielectric layer about the gate and the sacrificial spacer; forming a contact to the gate; substantially removing the sacrificial spacer, wherein a space is formed between the gate and the first dielectric layer; and forming a sealed air gap in the space by depositing a second dielectric layer over the first dielectric layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horak, David V Essex Junction, US 328 7699
Huang, Elbert E Carmel, US 80 1620
Koburger,, III Charles W Delmar, US 105 1620
La, Tulipe, Jr Douglas C Guilderland, US 37 856
Ponoth, Shom Gaithersburg, US 240 3542

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