Method of manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8871644
APP PUB NO 20140287586A1
SERIAL NO

14016744

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Abstract

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According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gawase, Akifumi Kuwana, JP 52 104
Matsui, Yukiteru Nagoya, JP 87 533
Minamihaba, Gaku Yokohama, JP 96 926

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