Etching agent, etching method and liquid for preparing etching agent

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United States of America Patent

PATENT NO 8871653
SERIAL NO

13846225

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Abstract

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An etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film on a semiconductor substrate and an etching method using the etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive. An etching method for etching a titanium (Ti)-based metal film on a semiconductor substrate using the etching agent. A solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive.

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Patent Owner(s)

Patent OwnerAddress
FUJIFILM CORPORATION26-30 NISHIAZABU 2-CHOME MINATO-KU TOKYO 106-8620

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashida, Ichiro Tokyo, JP 18 519
Kikuchi, Nobuyuki Saitama, JP 20 210
Matsuda, Osamu Saitama, JP 75 908
Shirahata, Satoshi Saitama, JP 5 25

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