Memory constructions

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8872150
APP PUB NO 20140209848A1
SERIAL NO

14242706

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Abstract

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Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pirovano, Agostino Milan, IT 143 1175
Redaelli, Andrea Casatenovo, IT 153 1030

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