Integrated circuit structure having air-gap trench isolation and related design structure

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United States of America Patent

PATENT NO 8872305
APP PUB NO 20140061727A1
SERIAL NO

14073178

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Abstract

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A method of forming an integrated circuit structure includes: forming a vent via extending through a shallow trench isolation (STI) and into a substrate; selectively removing an exposed portion of the substrate at a bottom of the vent via to form an opening within the substrate, wherein the opening within the substrate abuts at least one of a bottom surface or a sidewall of the STI; and sealing the vent via to form an air gap in the opening within the substrate.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Camillo-Castillo, Renata A Essex Junction, US 16 427
Dunn, James S Jericho, US 61 704
Harame, David L Essex Junction, US 86 853
Stamper, Anthony K Williston, US 613 6573

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