Nonvolatile semiconductor memory device and method for manufacturing the same

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United States of America Patent

PATENT NO 8873266
SERIAL NO

13399195

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Abstract

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According to one embodiment, a nonvolatile semiconductor memory device includes a first memory string including a first memory cell and a second memory cell aligned along a first axis, a source contact provided at a source-side end of the first memory string, a second memory string that extends along the first axis and includes a third memory cell that aligns with the first memory cell along a second axis perpendicular to the first axis, and a shield conductive layer. The shield conductive layer extends along the first axis between the first memory string and the second memory string and is electrically connected to the source contact.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okamoto, Tatsuya Mie-ken, JP 55 286

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