3D architecture for bipolar memory using bipolar access device

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United States of America Patent

PATENT NO 8873271
SERIAL NO

13209405

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Abstract

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Memory device and method for fabricating a memory device on two layers of a semiconductor wafer. An example device includes bit lines and word lines fabricated at one layer of a semiconductor wafer and re-writable nonvolatile memory cells that include a two-terminal access device with a bidirectional voltage-current characteristics for positive and negative voltages applied at the terminals. Additionally, a drive circuit electrically coupled to the memory cells and configured to program the memory cells is fabricated at another layer of the semiconductor wafer. Another example embodiment includes a memory device where a plurality of memory arrays are fabricated at one layer of a semiconductor wafer and a plurality of drive circuits electrically coupled to the memory cells and configured to read the memory cells are fabricated at a second layer of the semiconductor wafer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gopalakrishnan, Kailash San Jose, US 86 968
Lam, Chung H Peekskill, US 257 3514
Li, Jing Ossing, US 975 5495

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