Methods of forming field effect transistors on substrates
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United States of America Patent
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Nov 4, 2014
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app pub date -
Apr 17, 2013
filing date -
Aug 30, 2005
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Abstract
The invention includes methods of forming field effect transistors. In one implementation, the invention encompasses a method of forming a field effect transistor on a substrate, where the field effect transistor comprises a pair of conductively doped source/drain regions, a channel region received intermediate the pair of source/drain regions, and a transistor gate received operably proximate the channel region. Such implementation includes conducting a dopant activation anneal of the pair of source/drain regions prior to depositing material from which a conductive portion of the transistor gate is made. Other aspects and implementations are contemplated.
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