Methods of manufacturing finFET devices

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United States of America Patent

PATENT NO 8877615
SERIAL NO

13431770

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Abstract

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A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4269
Horak, David V Essex Junction, US 328 7699
Jagannathan, Hemanth Guilderland, US 258 2168
Koburger,, III Charles W Delmar, US 105 1620

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