Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 4, 2014
Issued Date -
N/A
app pub date -
Mar 25, 2010
filing date -
Mar 27, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlxGa1-xN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully