Fin field effect transistors including energy barriers

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United States of America Patent

PATENT NO 8878191
SERIAL NO

13612376

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Abstract

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A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mouli, Chandra V Boise, US 57 727

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