Compound semiconductor devices and methods of fabricating the same

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United States of America Patent

PATENT NO 8878233
APP PUB NO 20130285013A1
SERIAL NO

13880706

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Abstract

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Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

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Patent Owner(s)

Patent OwnerAddress
LG SILTRON INCGUMI GYEONGSANBUK-DO 730-350
KUMOH NATIONAL INSTITUTE OF TECHNOLOGY INDUSTRY-ACADEMIC COOPERATION FOUNDATION61 DAEHAK-RO GYEONGSANGBUK-DO GUMI-SI 39177

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
An, Sung-Jin Gyeongbuk, KR 8 179
Kim, Seok-Han Daegu, KR 2 21
Lee, Dong-Gun Gyeongbuk, KR 47 241

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