Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

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United States of America Patent

PATENT NO 8878235
SERIAL NO

13235409

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Abstract

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In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (“CNT”) material above the substrate, wherein the CNT material comprises a single CNT. Numerous other aspects are provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Wu-Yi San Jose, US 7 153
Hou, Kun Milpitas, US 23 399
Makala, Raghuveer S Sunnyvale, US 246 6357
Nian, Yibo Palo Alto, US 4 147
Schricker, April D Palo Alto, US 25 575
Zhang, Jingyan Santa Clara, US 17 383

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