Electronic device and method for producing electronic device
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United States of America Patent
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Nov 4, 2014
Issued Date -
N/A
app pub date -
Aug 24, 2012
filing date -
Feb 26, 2010
priority date (Note) -
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Abstract
Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element.
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