Program verify operation in a memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 4, 2014
Issued Date -
N/A
app pub date -
Nov 19, 2010
filing date -
Nov 19, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Methods for program verifying, program verify circuits, and memory devices are disclosed. One such method for program verifying includes generating a ramped voltage for a plurality of count values. The ramped voltage is applied to a control gate of a memory cell being program verified. At least a portion of each count value is compared to an indication of a target threshold voltage for the memory cell. When the at least a portion of the count value is equal to the indication of the target threshold voltage indication, sense circuitry is used to check if the memory cell has been activated by the voltage generated by the count. If the memory cell has been activated, an inhibit latch is set to inhibit further programming of the memory cell. If the memory cell has not been activated by the voltage, the memory cell is biased with another programming pulse.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully