Counter doping compensation methods to improve diode performance

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United States of America Patent

PATENT NO 8883589
SERIAL NO

12892633

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Abstract

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A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bandyopadhyay, Abhijit San Jose, US 34 1094
Chen, Yung-Tin Santa Clara, US 70 1313
Costa, Xiying San Jose, US 39 1260
Hou, Kun Milpitas, US 23 399
Le, Brian San Jose, US 13 236

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