Heating plate with planar heater zones for semiconductor processing
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United States of America Patent
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Nov 11, 2014
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N/A
app pub date -
Dec 10, 2013
filing date -
Oct 21, 2009
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Abstract
A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.
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