Pillar-based interconnects for magnetoresistive random access memory

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United States of America Patent

PATENT NO 8884387
SERIAL NO

13568670

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Abstract

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A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Assefa, Solomon Ossining, US 96 1463
Gaidis, Michael C Wappingers Falls, US 66 762
Joseph, Eric A White Plains, US 95 825
O'Sullivan, Eugene J Nyack, US 123 1618

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