Method for manufacturing semiconductor optical device and semiconductor optical device
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United States of America Patent
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Nov 18, 2014
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Jul 16, 2012
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Jul 22, 2011
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Abstract
A method for manufacturing a semiconductor optical device includes the steps of growing a stacked semiconductor layer on a substrate having a cleavage direction in a first direction; forming a first mask having a plurality of openings arranged in the first direction; forming a mark array by etching the stacked semiconductor layer using the first mask; forming a second mask having first and second openings extending in a second direction intersecting the first direction; obtaining a substrate product by forming first and second grooves, and a waveguide mesa by etching the stacked semiconductor layer by using the second mask; and producing a laser diode bar by cleaving the substrate product including the waveguide mesa. First and second residual marks are formed on the upper surface of the waveguide mesa. First and second transfer marks are formed on the bottoms of the first and the second grooves, respectively.
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