Semiconductor device and method of forming the same
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United States of America Patent
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Nov 18, 2014
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app pub date -
Dec 4, 2012
filing date -
Dec 4, 2012
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Abstract
A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in the substrate adjacent to the NMOS gate structure. The method also includes forming a lightly doped source/drain (LDD) region in the amorphized region. The method further includes depositing a stress film over the NMOS gate structure, performing an annealing process, and removing the stress film.
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