Etchant for electrode and method of fabricating thin film transistor array panel using the same
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United States of America Patent
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Nov 25, 2014
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app pub date -
Aug 17, 2010
filing date -
Apr 20, 2010
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Abstract
The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.
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