Importance

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Abstract

An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron; and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage; wherein at least one tipless transistor has source and drain vertical doping profiles without extension regions that extend in a lateral direction under a gate electrode. In addition or alternatively, an integrated circuit can include minimum feature size transistors having gate lengths of less than one micron; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein at least one of the first or second transistor is a tipless transistor having source and drain vertical doping profiles without extension regions that extend in a lateral direction under a gate electrode.

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First Claim