Reducing contact resistance for field-effect transistor devices

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United States of America Patent

PATENT NO 8895417
SERIAL NO

13306276

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Abstract

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A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Afzali-Ardakani, Ali Ossining, US 281 3228
Chandra, Bhupesh Jersey City, US 23 220
Tulevski, George Stojan White Plains, US 10 191
Xia, Fengnian Plainsboro, US 31 679

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