Dielectric treatment module using scanning IR radiation source

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United States of America Patent

PATENT NO 8895942
SERIAL NO

12211640

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Abstract

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A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Faguet, Jacques Albany, US 51 3319
Lee, Eric M Austin, US 34 2862
Liu, Junjun Austin, US 43 3359
Toma, Dorel I Dripping Springs, US 22 2294
Yue, Hongyu Plano, US 39 1527

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