Semiconductor device and method for manufacturing the same
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United States of America Patent
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Nov 25, 2014
Issued Date -
N/A
app pub date -
Aug 31, 2012
filing date -
Dec 20, 2011
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a lower layer connection object, a stacked body, an insulating film, and a via. The stacked body has a plurality of insulating layers and a plurality of electrode layers alternately stacked on the lower layer connection object. The stacked body has a staircase structure unit. The via connects uppermost electrode layer at each step of the staircase structure unit and the lower layer connection object through the via hole. The via has an upper part provided on and in contact with a top face of the uppermost electrode layer, and a penetrating part provided to be thinner than the upper part inside the insulating film in the via hole. The penetrating part connects the upper part and the lower layer connection object.
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