Resistance change memory device that stores a reversible resistance value as data
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United States of America Patent
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Nov 25, 2014
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app pub date -
Jul 13, 2011
filing date -
May 7, 2008
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Abstract
A resistance change memory device includes: a memory cell formed of a variable resistance element and a diode connected in series, the state of the variable resistance element being reversibly changed in accordance with applied voltage or current; and a stabilizing circuit so coupled in series to the current path of the memory cell as to serve for stabilizing the state change of the memory cell passively.
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