Semiconductor processing system having multiple decoupled plasma sources

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United States of America Patent

PATENT NO 8900403
SERIAL NO

13104925

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Abstract

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A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gottscho, Richard Dublin, US 16 1069
Holland, John Patrick San Jose, US 48 1543
Singh, Harmeet Fremont, US 162 5089
Ventzek, Peter L G San Francisco, US 45 444

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