Method for forming self-aligned airgap interconnect structures
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United States of America Patent
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Dec 2, 2014
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Apr 15, 2011
filing date -
Apr 15, 2011
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Abstract
Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.
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