System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections

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United States of America Patent

PATENT NO 8900990
SERIAL NO

13731878

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Abstract

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Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Clevenger, Lawrence A LaGrangeville, US 711 4453
Goldberg, Cindy Cold Spring, US 10 109
Kleemeier, Walter Fishkill, US 16 154
Radens, Carl LaGrangeville, US 157 2297
Xu, Yiheng Hopewell Junction, US 53 340
Zhang, John H Fishkill, US 176 1365

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