Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems

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United States of America Patent

PATENT NO 8900992
SERIAL NO

13950583

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Abstract

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Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Antonov, Vassil Boise, US 25 102
Bhat, Vishwanath Boise, US 78 1258
Gealy, Dan Kuna, US 56 1151

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