ARC residue-free etching
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United States of America Patent
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Dec 2, 2014
Issued Date -
N/A
app pub date -
Apr 6, 2011
filing date -
Apr 6, 2011
priority date (Note) -
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Abstract
Antireflective residues during pattern transfer and consequential short circuiting are eliminated by employing an underlying sacrificial layer to ensure complete removal of the antireflective layer. Embodiments include forming a hard mask layer over a conductive layer, e.g., a silicon substrate, forming the sacrificial layer over the hard mask layer, forming an optical dispersive layer over the sacrificial layer, forming a silicon anti-reflective coating layer over the optical dispersive layer, forming a photoresist layer over the silicon anti-reflective coating layer, where the photoresist layer defines a pattern, etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer.
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