Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 2, 2014
Issued Date -
N/A
app pub date -
Aug 30, 2013
filing date -
Mar 2, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully