layer within high aspect ratio deep trenches

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United States of America Patent

PATENT NO 8901706
SERIAL NO

13345290

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Abstract

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A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chudzik, Michael P Danbury, US 140 2521
Dirahoui, Bachir Bedford Hills, US 12 68
Krishnan, Rishikesh Poughkeepsie, US 53 244
Krishnan, Siddarth A Peekskill, US 72 821
Kwon, Oh-jung Hopewell Junction, US 45 367
Parries, Paul C Wappingers Falls, US 58 673
Yan, Hongwen Somers, US 55 362

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