Write scheme for charge trapping memory
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United States of America Patent
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Dec 2, 2014
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N/A
app pub date -
May 28, 2014
filing date -
Dec 6, 2013
priority date (Note) -
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Abstract
In a charge trapping memory, data that would otherwise be likely to remain adjacent to unwritten word lines is written three times, along three immediately adjacent word lines. The middle copy is protected from charge migration on either side and is considered a safe copy for later reading. Dummy data may be programmed along a number of word lines to format a block for good data retention.
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