Nonvolatile semiconductor memory device
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United States of America Patent
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Dec 2, 2014
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N/A
app pub date -
Mar 15, 2012
filing date -
Jun 16, 2011
priority date (Note) -
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Abstract
In a writing operation, a control circuit raises the voltage of a writing-prohibited bit line among a plurality of bit lines to a first voltage, and thereafter brings the writing-prohibited bit line into a floating state. Then, the control circuit raises the voltage of a writing bit line other than the writing-prohibited bit line to a second voltage. In this way, the control circuit prohibits writing into a memory transistor corresponding to the writing-prohibited bit line. On the other hand, the control circuit executes writing into a memory transistor corresponding to the writing bit line.
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