Memory system having nonvolatile semiconductor memories with control operation having high-current and low-current periods

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United States of America Patent

PATENT NO 8902662
SERIAL NO

13226180

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Abstract

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According to one embodiment, a memory system includes a first nonvolatile semiconductor memory, a second nonvolatile semiconductor memory and a controller. The first memory has memory cells and executes a first operation that is at least one of write, read, and erase operations with respect to the memory cells. The first operation includes a first sub-operation and a second-sub operation that consume a current which is equal to or higher than a predetermined current. The second memory has memory cells and executes a second operation that is at least one of write, read, and erase operations with respect to the memory cells. The second operation includes a third sub-operation and a fourth sub-operation that consume a current which is equal to or higher than the predetermined current. The controller controls the first operation and the second operation of the first memory and the second memory.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shiga, Hitoshi Yokohama, JP 61 722
Yoshihara, Masahiro Yokohama, JP 60 783

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