Active matrix using hybrid integrated circuit and bipolar transistor
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United States of America Patent
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Dec 9, 2014
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app pub date -
Aug 21, 2013
filing date -
Jul 24, 2013
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Abstract
A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer disposed therebetween, the base substrate being reduced in thickness. First devices are formed in the semiconductor layer, the first devices being connected to first metallizations on a first side of the dielectric layer. Second devices are formed in the base substrate, the second devices being connected to second metallizations formed on a second side of the dielectric layer opposite the first side. A through via connection is configured to connect the first metallizations to the second metallizations through the dielectric layer. Pixel circuits and methods are also disclosed.
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