Nonvolatile semiconductor memory device containing a material having an oxygen dissociation catalytic action
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 9, 2014
Issued Date -
N/A
app pub date -
Mar 23, 2012
filing date -
Oct 7, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one embodiment, a method of manufacturing a nonvolatile semiconductor memory device is provided. In the method, a conductive film serving as a control gate is formed above a substrate. A hole extending through the conductive film from its upper surface to its lower surface is formed. A block insulating film, a charge storage layer, a tunnel insulating film, and a semiconductor layer are formed on the inner surface of the hole. A film containing a material having an oxygen dissociation catalytic action is formed on the semiconductor layer not to fill the hole. The interface between the tunnel insulating film and the semiconductor layer is oxidized through the film from the inside of the hole.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully