Semiconductor structures with dual trench regions and methods of manufacturing the semiconductor structures
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United States of America Patent
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Dec 9, 2014
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app pub date -
Apr 18, 2011
filing date -
Apr 18, 2011
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Abstract
Semiconductor structures with dual trench regions and methods of manufacturing the semiconductor structures are provided herein. The method includes forming a gate structure on an active region and high-k dielectric material formed in one or more trenches adjacent to the active region. The method further includes forming a sacrificial material over the active region and portions of the high-k dielectric material adjacent sidewalls of the active region. The method further includes removing unprotected portions of the high-k dielectric material, leaving behind a liner of high-k dielectric material on the sidewalls of the active region. The method further includes removing the sacrificial material and forming a raised source and drain region adjacent to sidewalls of the gate structure.
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